Memory Design Engineer 3D-IP Semiconductors - Bengaluru Area, India

Job description

For our Memory team we are hiring candidates with 3-8 years' experience in Memory Development. The role is Memory Architecture Design and Characterization in advance process technology nodes (65nm/45nm/28nm and lower process technologies )

Below are the details of  the position:

• Designation : Design Engg/Senior Design Engg/Team Leader
• Experience :  3-8 years' in Memory Development (SRAM/FLASH)
• Qualification : B.E/B.Tech/M.Tech/M.S/M.E in VLSI, Electrical or Electronics Engineering
• Location : Bangalore

Desired Skills and Experience

1. Memory Architect

• 3-8 years' experience in the development of SRAM Memory Compilers, embedded Flash Memory
• Expertise in Memory Architecture design, Critical Path schematic design, Sense Amplifier design, BitCell design.
• Experience in latest process nodes such as 28nm and lower.  
• Knowledge of Timing, Marginalities, Low power issues is a must
• Knowledge of layout issues in different Memory architectures
• Knowledge of Cadence/Synopsys/Mentor EDA tools is a must
• Knowledge of scripting languages such as Shell, Peril is a plus

       2.  Memory Characterization

• 3-8 years' experience in the development of SRAM Memory Compilers
• Hands on experience in Memory Characterization for latest process technology nodes (65nm/45nm/28nm) 
• Expertise in writing Timing definitions(setup, hold, cycle times, etc.) and Marginalities
• Hands on experience in generating and verification of views such as.LIB, VITAL, LEF, etc.
• Knowledge of Perl/Shell Programming is a plus

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